All-Epitaxial Mid-IR Plasmonic Optoelectronics

Dr. Dan Wasserman, University of Texas Austin
February 25, 2021

The mid-infrared (mid-IR) spectral range (loosely defined as the wavelengths between 3-30µm) has become a burgeoning and dynamic field of research for a variety of technologically vital applications. Nonetheless, the development of the mid-IR optical infrastructure still trails behind that of the shorter, more mature, telecom and visible wavelength ranges. This can be viewed as a drawback of mid-IR photonics research (more expensive, limited efficiency components and materials), or alternatively, as an opportunity. In particular, the mid-IR provides a design space where a wide range of engineered and intrinsic light matter interactions can be harnessed to develop a new generation of optical materials. In this talk, Dr. Wasserman discussed recent work developing novel optoelectronic, all-dielectric, plasmonic and phononic materials, devices, and structures for mid-IR wavelength applications. In particular, he discusses the range of phenomena which can be leveraged to demonstrate unique designer materials, mid-IR devices, and novel characterization techniques. He focuses on recent results demonstrating that all-epitaxial plasmonic materials can be integrated monolithically with quantum engineered optoelectronic materials for enhanced performance mid-IR detectors and emitters. Ultimately, Dr. Wasserman makes an effort to demonstrate that the mid-IR provides a unique materials playground for the exploration, and implementation, of a range of light-matter interactions.
 
 

To view Dr. Wasserman’s webinar, please click on the link below:
All-Epitaxial Mid-IR Plasmonic Optoelectronics